Complementary metal oxide semiconductor image sensor and method for fabricating the same

ABSTRACT

A CMOS image sensor and a method for fabricating the same is disclosed, to enhance the image-sensing efficiency by forming a concave lens area for improving the light-condensing efficiency in a planarization layer formed before a micro-lens array, in which the CMOS image sensor includes a plurality of photosensitive devices on a semiconductor substrate; an insulating interlayer on the plurality of photosensitive devices; a plurality of color filter layers in correspondence with the respective photosensitive devices, to filter the light by respective wavelengths; a planarization layer on the color filter layers, and having first micro-lens by intaglio in correspondence with the respective photosensitive patterns to condense the light secondly; and a plurality of second micro-lens layers on the planarization layer in correspondence with the respective photosensitive devices, to condense the light firstly.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of Korean Application No.P2004-63033, filed on Aug. 11, 2004, which is hereby incorporated byreference as if fully set forth herein.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an image sensor, and more particularly,to a CMOS (complementary metal oxide semiconductor) image sensor and amethod for fabricating the same, to enhance the image-sensing efficiencyby forming a concave lens area for improving the light-condensingefficiency in a planarization layer formed before a micro-lens array.

2. Discussion of the Related Art

Generally, an image sensor is a semiconductor device for converting anoptical image into an electric signal. The image sensor can be broadlycategorized into a charge coupled device (CCD) and a complementary metaloxide semiconductor (CMOS) image sensor.

The CMOS image sensor is provided with a photodiode PD for sensing thelight, and a CMOS logic circuit for converting the sensed light to dataof electric signals. At this time, as the amount of sensed lightincreases, photosensitivity of the image sensor improves.

In order to improve the photosensitivity, there is requirement forenhancing a fill factor of occupying a photodiode area in an entire areaof the image sensor, or for condensing the light to the photodiode bychanging the light-path of the light incident on the remaining areasexcept the photodiode area.

For example, a micro-lens may be provided to condense the light. Thatis, a convex micro-lens is provided above the photodiode, wherein theconvex micro-lens is formed of a material having great transmittance. Asa result, the incident light is refracted by the convex micro-lens,whereby it is possible to provide more light to the photodiode. In thiscase, the light parallel to an optical axis of the micro-lens isrefracted by the micro-lens, so that a focus is formed at apredetermined point of the optical axis.

Hereinafter, a related art CMOS image sensor and a method for forming amicro-lens therein will be described with reference to the accompanyingdrawings.

FIG. 1 is a schematic view of a related art micro-lens of a CMOS imagesensor.

As shown in FIG. 1, a related art CMOS image sensor includes photodiodeareas 11, an insulating interlayer 12, a protective layer 13, an R/G/Bcolor filter layer 14, a planarization layer 15, and a convex micro-lens16. At this time, at least one photodiode area 1 is formed on asemiconductor substrate (not shown) to generate electric chargesdependent on the amount of incident light. Also, the insulatinginterlayer 12 is formed on an entire surface of the semiconductorsubstrate (not shown) including the photodiode areas 11, and theprotective layer 13 is formed on the insulating interlayer 12. Then, theR/G/B color filter layer 14 is formed on the protective layer 13 so asto transmit the light by respective wavelengths, and the planarizationlayer 15 is formed on the color filter layer 14. The convex micro-lens16 having a predetermined curvature is provided on the planarizationlayer 15, so as to condense the light passing through the color filterlayer 14 to the photodiode areas 11.

Although not shown, an optical shielding layer is provided in theinsulating interlayer 12, wherein the optical shielding layer preventsthe light from being incident to the remaining areas except thephotodiode areas 11.

At this time, it is possible to provide a photogate instead of thephotodiode.

Herein, the curvature and the height (‘A’ of FIG. 1) of the convexmicro-lens 16 are determined in due consideration of the focus of thecondensed light. Also, the micro-lens 16 is generally formed of polymerresin, which is formed in a sequential process of deposition,patterning, and reflow. That is, the optimal size, curvature andthickness of the micro-lens 16 are determined in due consideration ofposition and shape of a unit pixel region, thickness of a photosensitivedevice, and height, position and size of the optical shielding layer.

On fabrication of the related art CMOS image sensor, the micro-lens 16is a very important component for enhancing the light-condensingefficiency. The micro-lens 16 is provided to condense more light to thephotodiode area 11 through the color filter layer 14 when the ambientlight is irradiated.

The light incident on the image sensor is condensed by the micro-lens16, and then is filtered through the color filter layer. After that, thefiltered light is incident on the photodiode area 11 provided below thecolor filter 14. At this time, the optical shielding layer prevents theincident light from getting out of the path.

However, the micro-lens of the related art CMOS image sensor has thefollowing disadvantages.

The light parallel to the optical axis of the micro-lens is refractedand transmitted to the photosensitive device being opposite to themicro-lens, thereby operating the device. However, the light being notparallel to the optical axis of the micro-lens is refracted andtransmitted to the photosensitive device not to receive the light,whereby the device has misoperation.

Also, the amount of light transmitted to the photosensitive device isvaried on the kind and thickness of the lower layer positioned below themicro-lens, whereby the light-condensing efficiency lowers, therebydeteriorating the picture quality.

SUMMARY OF THE INVENTION

Accordingly, the present invention is directed to a CMOS image sensorand a method for fabricating the same that substantially obviate one ormore problems due to limitations and disadvantages of the related art.

An object of the present invention is to provide a CMOS image sensor anda method for fabricating the same, to enhance the image-sensingefficiency by forming a concave lens area for improving thelight-condensing efficiency in a planarization layer formed before amicro-lens array.

Additional advantages, objects, and features of the invention will beset forth in part in the description which follows and in part willbecome apparent to those having ordinary skill in the art uponexamination of the following or may be learned from practice of theinvention. The objectives and other advantages of the invention may berealized and attained by the structure particularly pointed out in thewritten description and claims hereof as well as the appended drawings.

To achieve these objects and other advantages and in accordance with thepurpose of the invention, as embodied and broadly described herein, aCMOS image sensor includes a plurality of photosensitive devices on asemiconductor substrate; an insulating interlayer on the plurality ofphotosensitive devices; a plurality of color filter layers incorrespondence with the respective photosensitive devices, to filter thelight by respective wavelengths; a planarization layer on the colorfilter layers, and having first micro-lens by intaglio in correspondencewith the respective photosensitive patterns to condense the lightsecondly; and a plurality of second micro-lens layers on theplanarization layer in correspondence with the respective photosensitivedevices, to condense the light firstly.

In another aspect, a method for fabricating a CMOS image sensor includessteps of forming an insulating interlayer on a semiconductor substratehaving a plurality of photosensitive devices; forming a protective layeron the insulating interlayer; forming color filter layers incorrespondence with the respective photosensitive devices; forming aplurality of first micro-lens provided densely to each of thephotosensitive devices by forming a planarization layer on the colorfilter layers, and selectively patterning the planarization layer; andforming a plurality of second micro-lens layers by depositing a materiallayer on the first micro-lens, and performing patterning and reflowingprocess thereon.

It is to be understood that both the foregoing general description andthe following detailed description of the present invention areexemplary and explanatory and are intended to provide furtherexplanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this application, illustrate embodiments of the invention andtogether with the description serve to explain the principle of theinvention. In the drawings:

FIG. 1 shows a micro-lens of a related art COS image sensor;

FIG. 2A shows a cross sectional view of a concave lens area according tothe present invention;

FIG. 2B shows a plane view of a concave lens area according to thepresent invention;

FIG. 3 shows a cross sectional view of a CMOS image sensor according tothe present invention; and

FIG. 4A to FIG. 4C show cross sectional views of the fabrication processfor a CMOS image sensor according to the present invention.

DETAILED DESCRIPTION OF THE INVENTION

Reference will now be made in detail to the preferred embodiments of thepresent invention, examples of which are illustrated in the accompanyingdrawings. Wherever possible, the same reference numbers will be usedthroughout the drawings to refer to the same or like parts.

Hereinafter, a CMOS image sensor and a method for fabricating the sameaccording to the present invention will be described with reference tothe accompanying drawings.

FIG. 2A shows a cross sectional view of a concave lens area according tothe present invention. FIG. 2B shows a plane view of a concave lens areaaccording to the present invention.

Generally, before forming a micro-lens in a surface of a CMOS imagesensor, a color filter array is formed, and a planarization process isperformed thereon. However, in the present invention, on performing theplanarization process, a planarization layer is provided to have aconcave pattern corresponding to a micro-lens, so that it is possible toimprove the light-condensing efficiency and the uniformity in themicro-lens.

That is, a mask process is performed to remove the planarization layerexcept a portion of a cell of the color filter array CFA. In order toperform the mask process, a mask layer has an open area of 0.3 μm to 0.4μm, as shown in FIG. 2A and FIG. 2B, whereby the planarization layer hasthe concave pattern corresponding to the micro-lens.

Accordingly, the planarization layer 21 has the concave pattern inintaglio, whereby a first micro-lens 22 of the concave pattern is formedin the planarization layer 21, for improving the light-condensingefficiency and the uniformity.

The first micro-lens 22 may be formed in an isotropic etching process,and the concave pattern of the first micro-lens 22 is filled with amaterial for a second micro-lens 23.

The light is firstly refracted and condensed by the second micro-lens23, and then the condensed light by the second micro-lens 23 is secondlyrefracted by the first micro-lens 22, and is transmitted tophotosensitive devices provided below the first micro-lens 22.

A method for fabricating the CMOS image sensor according to the presentinvention will be described as follows.

FIG. 3 shows a cross sectional view of the CMOS image sensor accordingto the present invention. FIG. 4A to FIG. 4C show cross sectional viewsof the fabrication process for the CMOS image sensor according to thepresent invention.

As shown in FIG. 3, the CMOS image sensor according to the presentinvention includes at least one photodiode 31, an insulating interlayer32, a protective layer 33, R/G/B color filter layers 34, a planarizationlayer 35, a main micro-lens 37. At this time, at least one photodiode 31is formed on a semiconductor substrate (not shown) so as to generateelectric charges dependent on the amount of incident light. Also, theinsulating interlayer 32 is formed on an entire surface of thesemiconductor substrate (not shown) including the photodiode 31. Then,the protective layer 33 is formed on the insulating interlayer 32, andthe RIG/B color filter layers 34 are formed on the protective layer 33to transmit the light by respective wavelengths. The planarization layer35 has a first micro-lens 36 of a concave pattern to secondly condensethe light firstly condensed by the main micro-lens 37 provided above thecolor filter layers 34, and the main micro-lens 37 of a predeterminedcurvature is formed on the planarization layer 35 to condense the light.

Although not shown, an optical shielding layer is provided in theinsulating interlayer 32, to prevent the light from being incident onthe remaining portions except the photodiode 31.

At this time, it is possible to provide a photogate instead of thephotodiode.

Also, the curvature and height of the second micro-lens 37 aredetermined in due consideration of a focus of the incident light. Incase of the present invention, the plurality of first micro-lens of theconcave pattern are provided below the second micro-lens 37, so that thelight-condensing efficiency improves, thereby increasing the designingmargin.

A method for fabricating the CMOS image sensor according to the presentinvention will be described as follows.

First, as shown in FIG. 4A, the plurality of photosensitive devices, forexample, the photodiodes 31 are formed on the semiconductor substrate,and then the insulating interlayer 32 is formed thereon. At this time,the insulating interlayer 32 may have a multi-layered structure.Although not shown, after forming a single-layered insulatinginterlayer, the optical shielding layer may be formed to prevent thelight from being incident on the remaining portions except thephotodiodes 31, and then the additional insulating interlayer may beformed thereon.

Subsequently, the protective layer 33 is formed flat on the insulatinginterlayer 32, to protect the device from moisture and scratch. Then,the R/G/B color filter layers 34 are formed on the protective layer 33,wherein the R/G/B color filter layers 34 filter the light by therespective wavelengths. After that, the planarization layer 36 is formedon the color filter layers 34, for obtaining planarization to controlthe focal distance and to form the micro-lens layers.

Referring to FIG. 4B, after patterning the mask layer to have theplurality of open areas in correspondence with the portions of thesecond micro-lens 37, the planarization layer 36 is etched with thepatterned mask layer. As a result, the plurality of first micro lens(fly eye lens) 36 of the concave pattern are formed in intaglio, whereineach of the first micro lens has a diameter between 0.3 μm and 0.4 μm.

On the exposure process for forming the planarization layer, the openareas of the mask layer are densely provided around the center in eachof the portions corresponding to the second micro-lens. Also, the openarea of the mask layer has the size not to completely develop aplanarization photoresist by an etchant.

The process of forming the first micro-lens 36 is simultaneouslyperformed with the process of removing the planarization layer 36 exceptthe portion of the cell of the color filter array CFA.

Subsequently, as shown in FIG. 4C, the second micro-lens 37 are providedin correspondence with the respective photodiodes 31 by coating thematerial layer for the micro-lens, and performing the patterning andreflowing process thereon.

In the CMOS image sensor and the method for fabricating the sameaccording to the present invention, the plurality of concave micro-lensare densely provided below the center in each of the portionscorresponding to the convex micro-lens, thereby improving thelight-condensing efficiency.

Accordingly, the CMOS image sensor and the method for fabricating thesame according to the present invention has the following advantages.

In the method for fabricating the CMOS image sensor according to thepresent invention, the lower micro lens of the fly eye lens type areprovided below the main micro-lens so as to improve the characteristicsof light of traveling straightly. As a result, it is possible to obtainthe light-condensing efficiency greater than that of the single-layeredlens.

By improving the light-condensing efficiency, it is possible to increasethe amount of light passing through the color filter layers and beingincident on the photodiodes, thereby improving the resolution. As aresult, the efficiency of the CMOS image sensor improves.

In addition, on forming the micro-lens, it is possible to provide themicro-lens without limitation to the thickness, thereby obtaining thesimplified fabrication process and the sufficient fabrication margin.

When patterning the planarization layer, the sub micro-lens are formedtogether, so that it is possible to improve the light-condensingefficiency without the additional fabrication process and the increaseof fabrication cost.

It will be apparent to those skilled in the art that variousmodifications and variations can be made in the present inventionwithout departing from the spirit or scope of the inventions. Thus, itis intended that the present invention covers the modifications andvariations of this invention provided they come within the scope of theappended claims and their equivalents.

1. A CMOS image sensor comprising: a plurality of photosensitive deviceson a semiconductor substrate; an insulating interlayer on the pluralityof photosensitive devices; a plurality of color filter layers incorrespondence with the respective photosensitive devices, to filter thelight by respective wavelengths; a planarization layer on the colorfilter layers, and having first micro-lens by intaglio in correspondencewith the respective photosensitive patterns to condense the lightsecondly; and a plurality of second micro-lens layers on theplanarization layer in correspondence with the respective photosensitivedevices, to condense the light firstly.
 2. The CMOS image sensor ofclaim 1, wherein each of the second micro-lens layers is formed in aconvex shape, and the plurality of first micro lens of the concavepattern are provided below each of the second micro-lens layers.
 3. TheCMOS image sensor of claim 2, wherein each concave pattern of the firstmicro-lens is filled with a material for the second micro-lens layer. 4.A method for fabricating a CMOS image sensor comprising: forming aninsulating interlayer on a semiconductor substrate having a plurality ofphotosensitive devices; forming a protective layer on the insulatinginterlayer; forming color filter layers in correspondence with therespective photosensitive devices; forming a plurality of firstmicro-lens provided densely to each of the photosensitive devices byforming a planarization layer on the color filter layers, andselectively patterning the planarization layer; and forming a pluralityof second micro-lens layers by depositing a material layer on the firstmicro-lens, and performing patterning and reflowing process thereon. 5.The method of claim 4, wherein the process of patterning theplanarization layer for the first micro-lens is simultaneously performedwith the process of removing the planarization layer corresponding to aportion except a cell of a color filter array CFA.
 6. The method ofclaim 4, wherein a mask layer for forming the concave first micro-lensin intaglio includes open areas, each open area having a diameterbetween 0.3 μm and 0.4 μm.